Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks

GeSn alloys offer a promising route towards CMOS compatible light source and the realization of electronic-photonic integrated circuits. One tactic to improve lasing performance lasers is use high Sn content, which improves directness. Another popular approach low moderate content with either compressive strain relaxation or tensile engineering, but these engineering techniques generally require optical cavities be suspended in air, leads poor thermal management. In this work, we develop novel dual insulator GeSn-on-insulator (GeSnOI) material platform that used produce strain-relaxed microdisks stuck on substrate. By undercutting only one insulating layer (i.e., Al 2 O 3 ), fabricate sitting SiO , attain three key properties for high-performance laser: removal harmful strain, decent management, excellent confinement. We believe an increase layers our can allow us achieve improved performance.